ISL9V3040S3ST Power Mosfet-transistor N-kanaals ontsteking IGBT-transistor
fabrikant:
Vervaardiging
Beschrijving:
IGBT 430V 21A TO263AB
Categorie:
Programmeerbare IC-Spaander
Prijs:
Negotiate
Betalingswijze:
T/T, Western Union, Paypal
Specificaties
Collector to Emitter Breakdown Voltage:
430 V
Gate to Emitter Voltage Continuous:
±10 V
Operating Junction Temperature:
-40 to 175 °C
Storage Junction Temperature:
-40 to 175 °C
Max Lead Temp for Soldering (Package Body for 10s):
260 °C
Electrostatic Discharge Voltage at 100pF, 1500Ω:
4 kV
Hoogtepunt:
multi emitter transistor
,silicon power transistors
Inleiding
Array
VERWANTE PRODUCTEN
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|---|---|---|---|
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Verzend RFQ
Voorraad:
MOQ:
10pcs